Hole Transport Characteristics in Pure and Doped GaSb
نویسنده
چکیده
The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K.
منابع مشابه
Remote p-type Doping in GaSb/InAs Core-shell Nanowires
By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mo...
متن کاملInfluences of Device Architectures on Characteristics of Organic Light-Emitting Devices Incorporating Ambipolar Blue-Emitting Ter(9,9-diarylfluorenes)
In this article, we report the studies of various device architectures of organic lightemitting devices (OLEDs) incorporating highly efficient blue-emitting and ambipolar carriertransport ter(9,9-diarylfluorene)s, and their influences on device characteristics. The device structures investigated include single-layer devices and multilayer heterostructure devices employing the terfluorene as one...
متن کاملTransport of modulation-doped Al0.2Ga0.8Sb/GaSb heterojunctions
Mobilities and carrier densities of modulation doped Al0.2Ga0.8Sb/GaSb heterostructures are presented for the first time. The structures studied were grown by molecular beam epitaxy and consisted of a single heterojunction with Te compensation doping to reduce the intrinsic p-type background. Hall measurements were performed from 30–300 K, giving ptype mobilities peaking at 3240 cm/Vs, a consid...
متن کاملCrystalline GaSb nanowires synthesized on amorphous substrates: from the formation mechanism to p-channel transistor applications.
In recent years, because of the narrow direct bandgap and outstanding carrier mobility, GaSb nanowires (NWs) have been extensively explored for various electronics and optoelectronics. Importantly, these p-channel nanowires can be potentially integrated with n-type InSb, InAs, or InGaAs NW devices via different NW transfer techniques to facilitate the III-V CMOS technology. However, until now, ...
متن کاملZn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications
The reflectance measurements of p-type GaSb:Zn epitaxial films with different hole concentrations, grown by metalorganic vapor-phase epitaxy, have been investigated in the 3–30-THz frequency region. The experimental spectra were fitted using a classical harmonic Lorentz oscillator and the Drude model, illustrating that the hole effective mass and the mobility change with the carrier concentrati...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2002